Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

535

終了ページ:

538

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa, M. Ito Trans Tech Publications	7 国際会議録 Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode K. Asano, A. Tanaka, S. Ogata, K. Nakayama, Y. Miyanagi Trans Tech Publications
2 国際会議録 SiC Zener Diode for Gate Protection of 4.5 kV SiCGT K. Nakayama, R. Ishii, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications	8 国際会議録 Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging R. Ishii, T. Miyanagi, I. Kamata, H. Tsuchida, K. Nakayama, Y. Sugawara Trans Tech Publications
3 国際会議録 8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation Nakayama, K., Sugawara, Y., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Asano, K., Ishii, R. Trans Tech Publications	9 国際会議録 Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer K. Nakayama, T. Hemmi, K. Asano Trans Tech Publications
4 国際会議録 Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications	10 国際会議録 High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode K. Nakayama, S. Ogata, T. Hayashi, T. Hemmi, A. Tanaka Trans Tech Publications
5 国際会議録 Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs T. Miyazawa, K. Nakayama, A. Tanaka, K. Asano, S.Y. Ji Trans Tech Publications	11 国際会議録 Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Tsuehida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asano, K., Sugawara, Y. Trans Tech Publications
6 国際会議録 Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process Tetsuro Hemmi, Koji Nakayama, Katsunori Asano, Tetsuya Miyazawa, Hidekazu Tsuchida Materials Research Society	12 国際会議録 Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT T. Miyazawa, S.Y. Ji, K. Kojima, Y. Ishida, K. Nakayama Trans Tech Publications

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