Microscopic Examination of SiO<sub>2</sub>/<i>4H</i>-SiC Interfaces

Microscopic Examination of SiO₂/4H-SiC Interfaces

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

330

終了ページ:

333

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO₂/SiC Interfaces on C-Face 4H-SiC T. Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, H. Okumura Trans Tech Publications	7 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications
2 国際会議録 Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, T. Kimoto Trans Tech Publications	8 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications
3 国際会議録 Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe Trans Tech Publications	9 国際会議録 Reverse Characteristics of a 4H-SiC Schottky Barrier Diode Hatakeyama, T., Shinohe, T. Trans Tech Publications
4 国際会議録 Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, J. Senzaki, K. Fukuda, H. Matsuhata Trans Tech Publications	10 国際会議録 Reverse Characteristics of a 4H-SiC Schottky Barrier Diode Hatakeyama, T., Shinohe, T. Trans Tech Publications
5 国際会議録 Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, K. Ichinoseki, H. Matsuhata, K. Fukuda Trans Tech Publications	11 国際会議録 Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements T. Hatakeyama, K. Takao, Y. Yonezawa, H. Yano Trans Tech Publications
6 国際会議録 TEM Observation of SiO2/4H-SiC Hetero Interface H. Matsuhata, J. Senzaki, I. Nagai, H. Yamaguchi Trans Tech Publications	12 国際会議録 Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1) T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe Trans Tech Publications

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Microscopic Examination of SiO2/4H-SiC Interfaces

類似資料:

Microscopic Examination of SiO₂/4H-SiC Interfaces