Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

269

終了ページ:

272

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT-Grown Substrates with Associated Stacking Faults S. Byrappa, F.Z. Wu, H.H. Wang, B. Raghothamachar, G. Choi Trans Tech Publications	7 国際会議録 Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography H.H. Wang, F.Z. Wu, M. Dudley, B. Raghothamachar, G. Chung Trans Tech Publications
2 国際会議録 Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector … F.Z. Wu, H.H. Wang, S. Byrappa, B. Raghothamachar, M. Dudley Trans Tech Publications	8 国際会議録 Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals M. Dudley, S. Byrappa, H. Wang, F. Wu, Y. Zhang, B. Raghothamachar, G. Choi, E.K. Sanchez, D. Hansen, R. Drachev, M.J. … Materials Research Society
3 国際会議録 The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC F.Z. Wu, M. Dudley, H.H. Wang, S. Byrappa, S. Sun Trans Tech Publications	9 国際会議録 Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method J.Q. Guo, Y. Yang, F.Z. Wu, J.J. Sumakeris, R.T. Leonard Trans Tech Publications
4 国際会議録 Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC F.Z. Wu, H.H. Wang, Y. Yang, J.Q. Guo, B. Raghothamachar Trans Tech Publications	10 国際会議録 Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density M. Dudley, N. Zhang, Y. Zhang, B. Raghothamachar, S. Byrappa Trans Tech Publications
5 国際会議録 Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC H.H. Wang, S. Byrappa, F. Wu, B. Raghothamachar, M. Dudley Trans Tech Publications	11 国際会議録 Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals S. Sato, T. Fujimoto, H. Tsuge, M. Katsuno, W. Ohashi Trans Tech Publications
6 国際会議録 Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer H.H. Wang, F.Z. Wu, S.Y. Byrapa, Y. Yang, B. Raghothamachar Trans Tech Publications	12 国際会議録 Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC H. Wang, F. Wu, Y. Yang, J. Guo, B. Raghothamachar Trans Tech Publications

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