Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

249

終了ページ:

252

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

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1 国際会議録 Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC F.C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, J. Isoya Trans Tech Publications	7 国際会議録 Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya Trans Tech Publications
2 国際会議録 Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy F.C. Beyer, H. Pedersen, A. Henry, E. Janzen Trans Tech Publications	8 国際会議録 Defects Introduced by Electron-Irradiation at Low Temperatures in SiC N.T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh Trans Tech Publications
3 国際会議録 Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor H. Pedersen, S. Leone, A. Henry, F.C. Beyer, V. Darakchieva Trans Tech Publications	9 国際会議録 Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC Son, N. T., Henry, A., Isoya, J., Janzen, E. Trans Tech Publications
4 国際会議録 Observation of Metastable Defect in Electron Irradiated 6H-SiC Hemmingsson,C.G., Son,N.T., Kordina,O., Lindstrom,J.L., Janzen,E. Trans Tech Publications	10 国際会議録 Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya Trans Tech Publications
5 国際会議録 Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC P. Carlsson, N.T. Son, H. Pedersen, J. Isoya, N. Morishita Trans Tech Publications	11 国際会議録 Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates S. Leone, Y.C. Lin, F.C. Beyer, S. Andersson, H. Pedersen Trans Tech Publications
6 国際会議録 Chloride-Based SiC Epitaxial Growth H. Pedersen, S. Leone, A. Henry, F.C. Beyer, A. Lundskog Trans Tech Publications	12 国際会議録 Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles S. Leone, H. Pedersen, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications

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