Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation

Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

181

終了ページ:

184

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC Matsuura, H., Aso, K., Kagamihara, S., Iwata, H., Ishida, T., Nishikawa, K. Trans Tech Publications	7 国際会議録 Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers N. Thierry-Jebali, C. Kawahara, T. Miyazawa, H. Tsuchida, T. Kimoto Trans Tech Publications
2 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	8 国際会議録 Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi Trans Tech Publications
3 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	9 国際会議録 Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC Matsuura, H., Sugiyama, K., Nishikawa, K., Nagata, T., Fukunaga, N. Trans Tech Publications
4 国際会議録 Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons H. Matsuura, N. Minohara, Y. Inagawa, M. Takahashi, T. Ohshima, H. Itoh Trans Tech Publications	10 国際会議録 Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers Tawara, T., Tsuchida, H., Izumi, S., Kamata, I., Izumi, K. Trans Tech Publications
5 国際会議録 Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC A. Koizumi, N. Iwamoto, S. Onoda, T. Ohshima, T. Kimoto Trans Tech Publications	11 国際会議録 Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers S. Beljakowa, S.A. Reshanov, B. Zippelius, M. Krieger, G. Pensl Trans Tech Publications
6 国際会議録 Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers H.R. Rossmann, U. Gysin, A. Bubendorf, T. Glatzel, S. Reshanov Trans Tech Publications	12 国際会議録 V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications

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