4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

123

終了ページ:

126

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System J.W. Wan, M.J. Loboda, M.F. MacMillan, G.Y. Chung, E.P. Carlson, V.M. Torres Trans Tech Publications	7 国際会議録 Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor MacMillan, M.F., Loboda, M.J., Chung, G., Carlson, E., Wan, J. Trans Tech Publications
2 国際会議録 Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates M.F. MacMillan, M.J. Loboda, J.W. Wan, G.Y. Chung, E.P. Carlson, M.J. Spaulding, D. Deese Trans Tech Publications	8 国際会議録 Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Maminella, D.K. Schroder, T. Isaacs-Smith Trans Tech Publications
3 国際会議録 Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates J. Zhang, G.Y. Chung, E.K. Sanchez, M.J. Loboda, S.G. Sundaresan Trans Tech Publications	9 国際会議録 Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Marinella, D.K. Schroder, P.B. Klein Trans Tech Publications
4 国際会議録 Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan Trans Tech Publications	10 国際会議録 Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy R.E. Stahlbush, N.A. Mahadik, M.J. O'Loughlin Trans Tech Publications
5 国際会議録 A New Method of Mapping and Counting Micropipes In SiC Wafers Wan, J.W., Park, S.H., Chung, G., Carlson, E., Loboda, M.J. Trans Tech Publications	11 国際会議録 Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC R.L. Myers-Ward, B.L. VanMil, R.E. Stahlbush, S.L. Katz, J.M. McCrate Trans Tech Publications
6 国際会議録 Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan, D.M. Hansen Trans Tech Publications	12 国際会議録 Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes G.Y. Chung, M.J. Loboda, S.G. Sundaresan, R. Singh Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12