High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

115

終了ページ:

118

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Growth and Properties of SiC On-Axis Homoepitaxial Layers J. Hassan, J.P. Bergman, J. Palisaitis, A. Henry, P.J. McNally Trans Tech Publications	7 国際会議録 Growth of High Quality p-Type 4H-SiC Substrates by HTCVD Sundqvist, B., Ellison, A., Jonsson, A., Henry, A., Hallin, C., Bergman, J.P., Magnusson, B., Janzen, E. Trans Tech Publications
2 国際会議録 Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC J. Hassan, L. Lilja, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications	8 国際会議録 On-Axis Homoepitaxy on Full 2″ 4H-SiC Wafer for High Power Applications J. Hassan, J.P. Bergman, A. Henry, P. Brosselard, P. Godignon Trans Tech Publications
3 国際会議録 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen Trans Tech Publications	9 国際会議録 Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD Hallin, C., Wahab, Q., Ivanov, I., Bergman, P., Janzen, E. Trans Tech Publications
4 国際会議録 Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers H. Pedersen, A. Henry, J. Hassan, J.P. Bergman, E. Janzen Trans Tech Publications	10 国際会議録 Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth X. Li, J. ul Hassan, O. Kordina, E. Janzén, A. Henry Trans Tech Publications
5 国際会議録 Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman Trans Tech Publications	11 国際会議録 High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers I.D. Booker, J. Hassan, E. Janzén, J.P. Bergman Trans Tech Publications
6 国際会議録 Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E. Trans Tech Publications	12 国際会議録 Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers J. Hassan, A. Henry, J.P. Bergman Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12