Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

59

終了ページ:

62

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles S. Leone, H. Pedersen, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications	7 国際会議録 Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications
2 国際会議録 Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor H. Pedersen, S. Leone, A. Henry, F.C. Beyer, V. Darakchieva Trans Tech Publications	8 国際会議録 Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition S. Leone, H. Pedersen, A. Henry, S.P. Rao, O. Kordina Trans Tech Publications
3 国際会議録 Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates A. Henry, S. Leone, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications	9 国際会議録 Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates M. Yazdanfar, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications
4 国際会議録 Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén Trans Tech Publications	10 国際会議録 Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers S. Leone, A. Henry, O. Kordina, E. Janzén Trans Tech Publications
5 国際会議録 Chloride-Based SiC Epitaxial Growth H. Pedersen, S. Leone, A. Henry, F.C. Beyer, A. Lundskog Trans Tech Publications	11 国際会議録 Concentrated Chloride-Based Epitaxial Growth of 4H-SiC A. Henry, S. Leone, S. Andersson, O. Kordina, E. Janzén Trans Tech Publications
6 国際会議録 Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy F.C. Beyer, H. Pedersen, A. Henry, E. Janzen Trans Tech Publications	12 国際会議録 Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC F.C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, J. Isoya Trans Tech Publications

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