Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique

Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

20

終了ページ:

23

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

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1 国際会議録 Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique G. Zoulis, J.W. Sun, I.G. Galben-Sandulache, G.L. Sun, S. Juillaguet Trans Tech Publications	7 国際会議録 On the Twin Boundary Propagation in (111) 3C-SiC Layers M. Marinova, A. Andreadou, A. Mantzari, E.K. Polychroniadis Trans Tech Publications
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