Radiation Hardness Evaluation of SiC-BGSIT

Radiation Hardness Evaluation of SiC-BGSIT

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

2

開始ページ:

941

終了ページ:

944

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs A. Takatsuka, Y. Tanaka, K. Yano, T. Yatsuo, K. Arai Trans Tech Publications	7 国際会議録 Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Statie Induction Transistors (BG-SITs) K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto Trans Tech Publications
2 国際会議録 Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs) K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, K. Arai Trans Tech Publications	8 国際会議録 Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring N. Fujita, N. Iwamoto, S. Onoda, T. Makino, T. Ohshima Trans Tech Publications
3 国際会議録 Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs) A. Takatsuka, Y. Tanaka, K. Yano, T. Yatsuo, K. Arai Trans Tech Publications	9 国際会議録 Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mΩ･cm2 Tanaka, Y., Yano, K., Okamoto, M., Takatsuka, A., Fukuda, K., Kasuga, M., Arai, K., Yatsuo, T. Trans Tech Publications
4 国際会議録 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs) A. Takatsuka, Y. Tanaka, K. Yano, N. Matsumoto, T. Yatsuo Trans Tech Publications	10 国際会議録 1270V, 1.21mΩ⋅cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs) Y. Tanaka, K. Yano, M. Okamoto, A. Takatsuka, K. Arai Trans Tech Publications
5 国際会議録 Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance M. Yamamoto, Y. Tanaka, T. Yatsuo, K. Yano Trans Tech Publications	11 国際会議録 Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, S. Nozaki Trans Tech Publications
6 国際会議録 980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors A. Takatsuka, Y. Tanaka, K. Yano, T. Yatsuo, K. Arai Trans Tech Publications	12 国際会議録 Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC A. Koizumi, N. Iwamoto, S. Onoda, T. Ohshima, T. Kimoto Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12