Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

2

開始ページ:

905

終了ページ:

908

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan Trans Tech Publications	7 国際会議録 6.2kV 4H-SiC pin Diode with Low Forward Voltage Drop Sugawara, Y., Asano, K., Singh, R., Palmour, J. W. Trans Tech Publications
2 国際会議録 Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Marinella, D.K. Schroder, P.B. Klein Trans Tech Publications	8 国際会議録 Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals Neimontas, K., Kadys, A., Aleksiejunas, R., Jarasiunas, K., Chung, G., Sanchez, E.K., Loboda, M.J. Trans Tech Publications
3 国際会議録 Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates J. Zhang, G.Y. Chung, E.K. Sanchez, M.J. Loboda, S.G. Sundaresan Trans Tech Publications	9 国際会議録 The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes Hefner, A., McNutt, T., Berning, D., Singh, R., Akuffo, A. Trans Tech Publications
4 国際会議録 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes S.G. Sundaresan, C. Sturdevant, M. Marripelly, E. Lieser, R. Singh Trans Tech Publications	10 国際会議録 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer G.Y. Chung, M.J. Loboda, J. Zhang, J.W. Wan, E.P. Carlson Trans Tech Publications
5 国際会議録 Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Maminella, D.K. Schroder, T. Isaacs-Smith Trans Tech Publications	11 国際会議録 Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Sumakeris, J.J., Das, M., Hobgood, H.McD., Mueller, S.G., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W., Carter, … Trans Tech Publications
6 国際会議録 Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan, D.M. Hansen Trans Tech Publications	12 国際会議録 High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift Das, M.K., Sumakeris, J.J., Paisley, M.J., Powell, A. Trans Tech Publications

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