Reliability of Thin Thermally Grown SiO<sub>2</sub> on 3C-SiC Studied by Scanning Probe Microscopy

Reliability of Thin Thermally Grown SiO₂ on 3C-SiC Studied by Scanning Probe Microscopy

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

2

開始ページ:

833

終了ページ:

836

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Electrical Activity of Structural Defects in 3C-SiC J. Eriksson, F. Roccaforte, M.H. Weng, F. Giannazzo, J. Lorenzzi Trans Tech Publications	7 国際会議録 Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O P. Fiorenza, S. Di Franco, F. Giannazzo, S. Rascunà, M. Saggio Trans Tech Publications
2 国際会議録 On the Viability of Au/3C-SiC Schottky Barrier Diodes J. Eriksson, M.H. Weng, F. Roccaforte, F. Giannazzo, S. Di Franco Trans Tech Publications	8 国際会議録 Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers F. Roccaforte, G. Greco, M.H. Weng, F. Giannazzo, V. Raineri Trans Tech Publications
3 国際会議録 Anomalous Fowler-Nordheim Tunneling through SiO₂/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements P. Fiorenza, A. La Magna, M. Vivona, F. Giannazzo, F. Roccaforte Trans Tech Publications	9 国際会議録 Conduction Mechanisms at SiO₂/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N₂O P. Fiorenza, F. Giannazzo, A. Frazzetto, A. Guarnera, M. Saggio Trans Tech Publications
4 国際会議録 Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces L.K. Swanson, P. Fiorenza, F. Giannazzo, F. Roccaforte Trans Tech Publications	10 国際会議録 Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC M.H. Weng, F. Roccaforte, F. Giannazzo, S. Di Franco, C. Bongiorno Trans Tech Publications
5 国際会議録 Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃ P. Fiorenza, L.K. Swanson, M. Vivona, F. Giannazzo, C. Bongiorno Trans Tech Publications	11 国際会議録 Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy F. Giannazzo, M. Rambach, D. Salinas, F. Roccaforte, V. Raineri Trans Tech Publications
6 国際会議録 Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N₂O and POCl₃ P. Fiorenza, M. Vivona, L.K. Swanson, F. Giannazzo, C. Bongiorno Trans Tech Publications	12 国際会議録 Nanoscale Characterization of SiC Interfaces and Devices F. Giannazzo, P. Fiorenza, M. Saggio, F. Roccaforte Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12

Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy

類似資料:

Reliability of Thin Thermally Grown SiO₂ on 3C-SiC Studied by Scanning Probe Microscopy