Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

2

開始ページ:

645

終了ページ:

650

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

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1 国際会議録 Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto Trans Tech Publications	7 国際会議録 Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto Trans Tech Publications
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