Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n-and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n-and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

419

終了ページ:

422

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC F. Yan, R.P. Devaty, W.J. Choyke, T. Kimoto, T. Ohshima Trans Tech Publications	7 国際会議録 Triangular Pore Formation in Highly Doped n-Type 4H SiC Shishkin, Y., Choyke, W.J., Devaty, R.P. Trans Tech Publications
2 国際会議録 Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons S.A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno Trans Tech Publications	8 国際会議録 Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC R.P. Devaty, F. Yan, W.J. Choyke, A. Gali, T. Kimoto Trans Tech Publications
3 国際会議録 Photoluminescence Study of C-H and C-D Centers in 4H SiC Bai, S., Yan, F., Devaty, R.P., Choyke, W.J., Grotzschel, R., Wagner, G., MacMillan, M.F. Trans Tech Publications	9 国際会議録 Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C F. Yan, A. Espenlaub, R.P. Devaty, T. Ohshima, W.J. Choyke Trans Tech Publications
4 国際会議録 Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence W.M. Klahold, R.P. Devaty, W.J. Choyke, K. Kawahara, T. Kimoto Trans Tech Publications	10 国際会議録 CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., Saddow, S.E. Trans Tech Publications
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6 国際会議録 Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy A. Gällström, I.G. Ivanov, R. Coble, R.P. Devaty, W.J. Choyke Trans Tech Publications	12 国際会議録 Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering R.P. Devaty, M.J. Clouter, Y. Ke, W.J. Choyke Trans Tech Publications

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