On the Luminescence and Driving Force of Stacking Faults in 4H-SiC

On the Luminescence and Driving Force of Stacking Faults in 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

277

終了ページ:

282

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.D. Hobart, K.X. Liu Trans Tech Publications	7 国際会議録 Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers K.X. Liu, X. Zhang, R.E. Stahlbush, M. Skowronski, J.D. Caldwell Trans Tech Publications
2 国際会議録 Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC Glembocki, O.J., Skowronski, M., Prokes, S.M., Gaskill, D.K., Caldwell, J.D. Trans Tech Publications	8 国際会議録 Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes Joshua David Caldwell, Robert E. Stahlbush, Eugene A. Imhoff, Orest J. Glembocki, Karl D. Hobart, Marko J. Tadjer, … Materials Research Society
3 国際会議録 Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, K.D. Hobart Trans Tech Publications	9 国際会議録 Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes Twigg, M.E., Stahlbush, R.E., Fatemi, M., Arthur, S.D., Fedison, J.B., Tucker, J.B., Wang, S. Trans Tech Publications
4 国際会議録 Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC Joshua David Caldwell, Paul B. Klein, Orest J. Glembocki, Robert E. Stahlbush, Kendrick X. Liu, Karl D. Hobart, Fritz … Materials Research Society	10 国際会議録 CHEMICALLY ASSISTED ION BEAM ETCHING OF SiGe Glembocki, O.J., Prokes, S.M., Stahlbush, R.E. Materials Research Society
5 国際会議録 Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy N.A. Mahadik, R.E. Stahlbush, S.B. Qadri, O.J. Glembocki, D.A. Alexson Trans Tech Publications	11 国際会議録 Mechanisms of Stacking Fault Growth in SiC PiN Diodes Stahlbush, R.E., Twigg, M.E., Sumakeris, J.J., Irvine, K.G., Losee, P.A. Materials Research Society
6 国際会議録 Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes J.D. Caldwell, R. Stahlbush, O. Glembocki, K. Hobart Electrochemical Society	12 国際会議録 Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications

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