Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

227

終了ページ:

230

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode M.Y. Zaman, D. Perrone, S. Ferrero, L. Scaltrito, M. Naretto Trans Tech Publications	7 国際会議録 Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes Scaltrito, L., Porro, S., Giorgis, F., Mandracci, P., Cocuzza, M., Pirri, C.F., Ricciardi, C., Ferrero, S., Richieri, … Trans Tech Publications
2 国際会議録 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts D. Perrone, M. Naretto, S. Ferrero, L. Scaltrito, C.F. Pirri Trans Tech Publications	8 国際会議録 Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC Ferrero, S., Albonico, A., Meotto, U. M., Rambola, G., Porro, S., Giorgis, F., Perrone, D., Scaltrito, L., Bontempi, E., … Trans Tech Publications
3 国際会議録 Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations D. Perrone, S. Ferrero, L. Scaltrito, M. Naretto, E. Celasco Trans Tech Publications	9 国際会議録 Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics Weiss, R., Frey, L., Ryssel, H. Trans Tech Publications
4 国際会議録 Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes Furno, M., Bonani, F., Ghione, G., Ferrero, S., Porro, S., Mandracci, P., Scaltrito, L., Perrone, D., Richieri, G., … Trans Tech Publications	10 国際会議録 Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes Tumakha, S.P., Porter, L.M., Ewing, D.J., Wahab, Q., Ma, X.Y., Sudarshan, T.S., Brillson, L.J. Trans Tech Publications
5 国際会議録 Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes Scaltrito, L., Celasco, E., Porro, S., Ferrero, S., Giorgis, F., Pirri, C.F., Perrone, D., Meotto, U., Mandracci, P., … Trans Tech Publications	11 国際会議録 Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments Kim, D.H., Na, H.J., Jung, S.Y., Song, I.B., Um, M.Y., Song, H.K., Jeong, J.K., Lee, J.B., Kim, H.J. Trans Tech Publications
6 国際会議録 Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures M.Y. Zaman, D. Perrone, S. Ferrero, L. Scaltrito, M. Naretto Trans Tech Publications	12 国際会議録 Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes Kang, S. C., Kum, B. H., Do, S. J., Je, J. H., Shin, M. W. MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12