Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

207

終了ページ:

210

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method M. Kawai, T. Mori, M. Kato, M. Ichimura, S. Sumie, H. Hashizume Trans Tech Publications	7 国際会議録 Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC M. Kato, Y. Mori, M. Ichimura Trans Tech Publications
2 国際会議録 Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution Kato, M., Ichimura, M., Arai, E., Sumie, S., Hashizume, H. Trans Tech Publications	8 国際会議録 Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC T. Yasuda, M. Kato, M. Ichimura, T. Hatayama Trans Tech Publications
3 国際会議録 Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation K. Yoshihara, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima Trans Tech Publications	9 国際会議録 Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay L. Ottaviani, O. Palais, D. Barakel, M. Pasquinelli Trans Tech Publications
4 国際会議録 Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity … Kato, Masashi, Watanabe, Hideki, Ichimura, Masaya, Arai, Eisuke Materials Research Society	10 国際会議録 Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer A. Yoshida, M. Kato, M. Ichimura Trans Tech Publications
5 国際会議録 Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC K. Miyake, T. Yasuda, M. Kato, M. Ichimura, T. Hatayama Trans Tech Publications	11 国際会議録 Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan, D.M. Hansen Trans Tech Publications
6 国際会議録 Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay Kumar, R. J., Losee, P. A., Li, C., Seiler, J., Bhat, I. B., Chow, T. P., Borrego, J. M., Gutmann, R. J. Trans Tech Publications	12 国際会議録 Identification of Structures of the Deep Levels in 4H-SiC H. Nakane, M. Kato, M. Ichimura, T. Ohshima Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12