Identification of Defects Limiting the Carrier Lifetime in n<sup>-</sup>Epitaxial Layers of 4H-SiC

Identification of Defects Limiting the Carrier Lifetime in n^-Epitaxial Layers of 4H-SiC

著者名:: P.B. Klein
掲載資料名:: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
シリーズ名:: Materials science forum
シリーズ巻号:: 645-648
発行年:: 2010
パート:: 1
開始ページ:: 193
終了ページ:: 198
総ページ数:: 6
出版情報:: Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:: 02555476
言語:: 英語
請求記号:: M23650
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers S.I. Maximenko, J.A. Freitas Jr., Y.N. Picard, P.B. Klein, R.L. Myers-Ward Trans Tech Publications	7 国際会議録 Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers P.B. Klein, J.D. Caldwell, A. Shrivastava, T.S. Sudarshan Trans Tech Publications
2 国際会議録 Defects Limiting Minorty Carrier Lifetime in 4H-SiC Epilayers P. B. Klein, B. Shanabrook, S. Huh, A. Polyakov, M. Skowronski, J. Sumakeris, M. O'Loughlin Electrochemical Society	8 国際会議録 Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping J. Hassan, J.P. Bergman Trans Tech Publications
3 国際会議録 Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Marinella, D.K. Schroder, P.B. Klein Trans Tech Publications	9 国際会議録 Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J. Trans Tech Publications
4 国際会議録 Long Carrier Lifetimes in n-Type 4H-SiC Epilayers P.B. Klein Trans Tech Publications	10 国際会議録 Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers P.B. Klein, R.L. Myers-Ward, K.K. Lew, B.L. VanMil, C.R. Eddy Jr. Trans Tech Publications
5 国際会議録 Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications	11 国際会議録 Understanding the Role of Defects in Limiting the Minority Carrier Lifetime in SiC Doolittle, W. A., Rohatgi, A., Ahrenkiel, R., Levi, D., Augustine, G., Hopkins, R. H. MRS - Materials Research Society
6 国際会議録 Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors A. Shrivastava, P.B. Klein, E.R. Glaser, J.D. Caldwell, A.V. Bolotnikov Trans Tech Publications	12 国際会議録 Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers L. Storasta, T. Miyazawa, H. Tsuchida Trans Tech Publications

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Identification of Defects Limiting the Carrier Lifetime in n-Epitaxial Layers of 4H-SiC

類似資料:

Identification of Defects Limiting the Carrier Lifetime in n^-Epitaxial Layers of 4H-SiC