Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

147

終了ページ:

150

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

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1 国際会議録 Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane A. Konno, Y. Narita, T. Itoh, K. Yasui, H. Nakzawa, T. Endoh, M. Suemitsu Electrochemical Society	7 国際会議録 Growth of 3C-SiC on Si by Low Temperature CVD Cloitre, T., Moreaud, N., Vicente, P., Sadowski, M.L., Aulombard, R.L. Trans Tech Publications
2 国際会議録 Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer Nakazawa, H., Suemitsu, M. Trans Tech Publications	8 国際会議録 Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development Okhuysen, M. E., Mazzola, M. S., Lo, Y. -H. Trans Tech Publications
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