Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

95

終了ページ:

98

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén Trans Tech Publications	7 国際会議録 Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles S. Leone, H. Pedersen, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications
2 国際会議録 Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications	8 国際会議録 Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition S. Leone, H. Pedersen, A. Henry, S.P. Rao, O. Kordina Trans Tech Publications
3 国際会議録 Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers S. Leone, A. Henry, O. Kordina, E. Janzén Trans Tech Publications	9 国際会議録 CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates X. Li, S. Leone, S. Andersson, O. Kordina, A. Henry Trans Tech Publications
4 国際会議録 CVD Growth of 3C-SiC on 4H-SiC Substrate A. Henry, X. Li, S. Leone, O. Kordina, E. Janzén Trans Tech Publications	10 国際会議録 Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates M. Yazdanfar, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications
5 国際会議録 Chloride-Based SiC Epitaxial Growth H. Pedersen, S. Leone, A. Henry, F.C. Beyer, A. Lundskog Trans Tech Publications	11 国際会議録 Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor H. Pedersen, S. Leone, A. Henry, F.C. Beyer, V. Darakchieva Trans Tech Publications
6 国際会議録 Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates A. Henry, S. Leone, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications	12 国際会議録 Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth X. Li, J. ul Hassan, O. Kordina, E. Janzén, A. Henry Trans Tech Publications

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