Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

63

終了ページ:

66

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique I.G. Galben-Sandulache, G.L. Sun, J.M. Dedulle, T. Ouisse, R. Madar Trans Tech Publications	7 国際会議録 Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT K. Ariyawong, E. Blanquet, J.M. Dedulle, T. Ouisse, D. Chaussende Trans Tech Publications
2 国際会議録 Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique I.G. Galben-Sandulache, M. Marinova, A. Mantzari, G.L. Sun, A. Andreadou Trans Tech Publications	8 国際会議録 On the Stability of 3C-SiC Single Crystals at High Temperatures D. Dompoint, I.G. Galben-Sandulache, A. Boulle, D. Chaussende, D. Eyidi Trans Tech Publications
3 国際会議録 Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique G. Zoulis, J.W. Sun, I.G. Galben-Sandulache, G.L. Sun, S. Juillaguet Trans Tech Publications	9 国際会議録 Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT J. Eid, I.G. Galben, G. Zoulis, T. Robert, D. Chaussende Trans Tech Publications
4 国際会議録 Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts F. Mercier, I.G. Galben-Sandulache, M. Marinova, G. Zoulis, T. Ouisse Trans Tech Publications	10 国際会議録 Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via PhySiCal Vapor Transport (PVT) Basceri, C., Khlebnikov, I., Khlebnikov, Y., Muzykov, P., Sharma, M., Stratiy, G., Silan, M., Balkas, C.M. Trans Tech Publications
5 国際会議録 Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT K. Ariyawong, N. Tsavdaris, J.M. Dedulle, E. Sarigiannidou, T. Ouisse Trans Tech Publications	11 国際会議録 Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method J.W. Choi, C.H. Son, J.M. Choi, G.S. Lee, W.J. Lee Trans Tech Publications
6 国際会議録 Top Seeded Solution Growth of 3C-SiC Single Crystals F. Mercier, D. Chaussende, J.M. Dedulle, M. Pons, R. Madar Trans Tech Publications	12 国際会議録 Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent J. Lefebure, J.M. Dedulle, T. Ouisse, D. Chaussende Trans Tech Publications

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