Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

59

終了ページ:

62

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds M. Marinova, G. Zoulis, T. Robert, F. Mercier, A. Mantzari Trans Tech Publications	7 国際会議録 Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy G. Zoulis, J.W. Sun, M. Beshkova, R. Vasiliauskas, S. Juillaguet Trans Tech Publications
2 国際会議録 Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique G. Zoulis, J.W. Sun, I.G. Galben-Sandulache, G.L. Sun, S. Juillaguet Trans Tech Publications	8 国際会議録 Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals G. Manolis, K. Jarasiunas, I.G. Galben, D. Chaussende Trans Tech Publications
3 国際会議録 Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique I.G. Galben-Sandulache, M. Marinova, A. Mantzari, G.L. Sun, A. Andreadou Trans Tech Publications	9 国際会議録 On the Stability of 3C-SiC Single Crystals at High Temperatures D. Dompoint, I.G. Galben-Sandulache, A. Boulle, D. Chaussende, D. Eyidi Trans Tech Publications
4 国際会議録 Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals G.L. Sun, I.G. Galben-Sandulache, T. Ouisse, J.M. Dedulle, M. Pons Trans Tech Publications	10 国際会議録 Structural Characterization of CF-PVT Grown Bulk 3C-SiC A. Mantzari, F. Mercier, M. Soueidan, D. Chaussende, G. Ferro Trans Tech Publications
5 国際会議録 Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique I.G. Galben-Sandulache, G.L. Sun, J.M. Dedulle, T. Ouisse, R. Madar Trans Tech Publications	11 国際会議録 Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy G. Zoulis, J. Sun, R. Vasiliauskas, J. Lorenzzi, H. Peyre Trans Tech Publications
6 国際会議録 Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT J. Eid, I.G. Galben, G. Zoulis, T. Robert, D. Chaussende Trans Tech Publications	12 国際会議録 Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts M. Marinova, A. Mantzari, J.W. Sun, J. Lorenzzi, A. Andreadou Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12