High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

13

終了ページ:

16

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt H. Daikoku, M. Kado, H. Sakamoto, H. Suzuki, T. Bessho Trans Tech Publications	7 国際会議録 Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition Fujiwara, H., Danno, K., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications
2 国際会議録 High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt M. Kado, H. Daikoku, H. Sakamoto, H. Suzuki, T. Bessho Trans Tech Publications	8 国際会議録 Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, Y. Kawai Trans Tech Publications
3 国際会議録 Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity T. Shirai, K. Danno, A. Seki, H. Sakamoto, T. Bessho Trans Tech Publications	9 国際会議録 Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching Y.Z. Yao, Y. Sugawara, Y. Ishikawa, H. Saitoh, K. Danno Trans Tech Publications
4 国際会議録 Diffusion and Gettering of Transition Metals in 4H-SiC K. Danno, H. Saitoh, A. Seki, T. Shirai, H. Suzuki Trans Tech Publications	10 国際会議録 Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate T. Hori, K. Danno, T. Kimoto Trans Tech Publications
5 国際会議録 Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals K. Danno, S. Yamaguchi, H. Kimoto, K. Sato, T. Bessho Trans Tech Publications	11 国際会議録 Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive Y.Z. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno Trans Tech Publications
6 国際会議録 High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications	12 国際会議録 High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment Nishizawa, S.I., Kato, T., Kitou, Y., Oyanagi, N., Hirose, F., Yamaguchi, H., Bahng, W., Arai, K. Trans Tech Publications

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