6H and 4H-SiC Avalanche Photodiodes

6H and 4H-SiC Avalanche Photodiodes

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

869

終了ページ:

872

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Solar-Blind 4H-SiC Avalanche Photodiodes S.I. Soloviev, A.V. Vert, J.A. Fronheiser, P.M. Sandvik Trans Tech Publications	7 国際会議録 Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes W.S. Loh, J.P.R. David, B.K. Ng, S.I. Soloviev, P.M. Sandvik Trans Tech Publications
2 国際会議録 Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes S.I. Soloviev, A.V. Vert, J.A. Fronheiser, P.M. Sandvik Trans Tech Publications	8 国際会議録 Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown S.I. Soloviev, P.M. Sandvik, A. Vertiatchikh, K. Dovidenko, H.Y. Cha Trans Tech Publications
3 国際会議録 Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability A.V. Vert, S.I. Soloviev, J.A. Fronheiser, P.M. Sandvik Trans Tech Publications	9 国際会議録 4H- and 6H- SiC Avalanche Photodiodes J. C. Campbell, X. Guo, A. Beck, H. Liu, D. McIntosh Electrochemical Society
4 国際会議録 Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers A.V. Vert, S.I. Soloviev, P.M. Sandvik Trans Tech Publications	10 国際会議録 Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers Ha, S., Mieszkowski, P., Rowland, L.B., Skowronski, M. Trans Tech Publications
5 国際会議録 Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes W.S. Loh, J.P.R. David, S.I. Soloviev, H.Y. Cha, P.M. Sandvik Trans Tech Publications	11 国際会議録 Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers Ha, S., Mieszkowski, P., Rowland, L.B., Skowronski, M. Trans Tech Publications
6 国際会議録 Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices L.B. Rowland, G.T. Dunne, J. Fronheiser, S. Soloviev Trans Tech Publications	12 国際会議録 EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors C.J. Cochrane, B.C. Bittel, P.M. Lenahan, J.A. Fronheiser, K. Matocha Trans Tech Publications

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