Channel Hot-Carrier Effect of 4H-SiC MOSFET

Channel Hot-Carrier Effect of 4H-SiC MOSFET

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

813

終了ページ:

816

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices L.C. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle Trans Tech Publications	7 国際会議録 A P-Channel MOSFET on 4H-SiC Han, J.S., Cheong, K.Y., Dimitrijev, S., Laube, M., Pensl, G. Trans Tech Publications
2 国際会議録 Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs L.C. Yu, J. Fronheiser, V. Tilak, K.P. Cheung Trans Tech Publications	8 国際会議録 Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors Z. Chbili, K.P. Cheung, J.P. Campbell, J. Chbili, M. Lahbabi Trans Tech Publications
3 国際会議録 Wafer-Level Hall Measurement on SiC MOSFET L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha Trans Tech Publications	9 国際会議録 Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Lu, C.-Y., Cooper, J.A., Jr., Chung, G.Y., Williams, J.R., McDonald, K., Feldman, L.C. Trans Tech Publications
4 国際会議録 Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET Z. Chbili, P.R. Shreshta, J.P. Campbell, J.S. Suehle, D.E. Ioannou Trans Tech Publications	10 国際会議録 Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Lu, C.-Y., Cooper, J.A., Jr., Chung, G.Y., Williams, J.R., McDonald, K., Feldman, L.C. Trans Tech Publications
5 国際会議録 Channel Hot Carrier Stress of Oxynitrided-Gate MOSFETs Nguyen, K., Lee, S., Kahrizi, M., Landsberger, L., Belkouch, S., Jean, C. Electrochemical Society	11 国際会議録 Hot carrier degradation of fully depleted SIMOX MOSFETs Sinha, S P, Ii, F D, loonnou, D E, Jenkins, W C, Hughes, H L, Lin, M S Electrochemical Society
6 国際会議録 The Challenge of Measuring Defects in Nanoscale Dielectrics K. Cheung, J.S. Suehle Electrochemical Society	12 国際会議録 Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs S. Dhar, A.C. Ahyi, J.R. Williams, S.H. Ryu, A.K. Agarwal Trans Tech Publications

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