Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

753

終了ページ:

756

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure M. Noborio, J. Suda, T. Kimoto Trans Tech Publications	7 国際会議録 Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs Noborio, M., Negoro, Y., Suda, J., Kimoto, T. Trans Tech Publications
2 国際会議録 Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures M. Noborio, J. Suda, T. Kimoto Trans Tech Publications	8 国際会議録 High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces M. Noborio, J. Suda, T. Kimoto Trans Tech Publications
3 国際会議録 Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature M. Kato, Y. Nanen, J. Suda, T. Kimoto Trans Tech Publications	9 国際会議録 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face M. Noborio, J. Suda, T. Kimoto Trans Tech Publications
4 国際会議録 Short-Channel Effects in 4H-SiC MOSFETs Noborio, M., Kanzaki, Y., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET) Kaido, J., Kimoto, T., Suda, J., Matsunami, H. Trans Tech Publications
5 国際会議録 Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs Y. Nanen, J. Suda, T. Kimoto Trans Tech Publications	11 国際会議録 Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation H. Miyake, T. Kimoto, J. Suda Trans Tech Publications
6 国際会議録 Improved Dielectric ind Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing Kimoto, T., Kawano, H., Noborio, M., Suda, J., Matsunami, H. Trans Tech Publications	12 国際会議録 MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation Kimoto, T., Kanzaki, Y., Noborio, M., Kawano, H., Matsunami, H. Materials Research Society

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