Critical Issues for MOS Based Power Devices in 4H-SiC

Critical Issues for MOS Based Power Devices in 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

743

終了ページ:

748

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices M. Das, S.K. Haney, C. Jonas, Q.C. Zhang, S.H. Ryu Trans Tech Publications	7 国際会議録 Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs S.H. Ryu, B.A. Hull, S. Dhar, L. Cheng, Q.C.J. Zhang Trans Tech Publications
2 国際会議録 A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications	8 国際会議録 Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal Das, M.K., Hull, B.A., Krishnaswami, S., Husna, F., Haney, S., Lelis, A.J., Scozzie, C.J., Scofield, J.D. Trans Tech Publications
3 国際会議録 Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs S. Dhar, A.C. Ahyi, J.R. Williams, S.H. Ryu, A.K. Agarwal Trans Tech Publications	9 国際会議録 Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications
4 国際会議録 Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs A. Ogunniyi, J. Schrock, M. Hinojosa, H. O'Brien, A.J. Lelis, S. Bayne, S.H. Ryu Trans Tech Publications	10 国際会議録 Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications
5 国際会議録 High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs L. Cheng, S.H. Ryu, A.K. Agarwal, M.J. O'Loughlin, A.A. Burk Trans Tech Publications	11 国際会議録 Development of 10 kV 4H-SiC Power DMOSFETs Ryu, S.H., Agarwal, A., Krishnaswami, S., Richmond, J., Palmour, J. Trans Tech Publications
6 国際会議録 Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Palmour, J.W., Ryu, S.H. Trans Tech Publications	12 国際会議録 Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power UMOSFET Structures Agarwal, A. K., Siergiej, R. R., Seshadri, S., White, M. H., McMullin, P. G., Burk, A. A., Rowland, L. B., Brandt, C. … MRS - Materials Research Society

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