4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts

4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

647

終了ページ:

650

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations D. Perrone, S. Ferrero, L. Scaltrito, M. Naretto, E. Celasco Trans Tech Publications	7 国際会議録 Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures M.Y. Zaman, D. Perrone, S. Ferrero, L. Scaltrito, M. Naretto Trans Tech Publications
2 国際会議録 Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC M. Naretto, D. Perrone, S. Ferrero, L. Scaltrito Trans Tech Publications	8 国際会議録 Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC Ferrero, S., Albonico, A., Meotto, U. M., Rambola, G., Porro, S., Giorgis, F., Perrone, D., Scaltrito, L., Bontempi, E., … Trans Tech Publications
3 国際会議録 Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode M.Y. Zaman, D. Perrone, S. Ferrero, L. Scaltrito, M. Naretto Trans Tech Publications	9 国際会議録 Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes Kang, S. C., Kum, B. H., Do, S. J., Je, J. H., Shin, M. W. MRS-Materials Research Society
4 国際会議録 Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes Scaltrito, L., Celasco, E., Porro, S., Ferrero, S., Giorgis, F., Pirri, C.F., Perrone, D., Meotto, U., Mandracci, P., … Trans Tech Publications	10 国際会議録 Evaluation of Schottky Barrier Height of Al, Ti, Au, and Ni Contacts to 3C-SiC Satoh, M., Matsuo, H. Trans Tech Publications
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6 国際会議録 Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes Furno, M., Bonani, F., Ghione, G., Ferrero, S., Porro, S., Mandracci, P., Scaltrito, L., Perrone, D., Richieri, G., … Trans Tech Publications	12 国際会議録 Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC Dahlquist,F., Zetterling,C.-M., Ostling,M., Rottner,K. Trans Tech Publications

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