Electrochemical Polishing of p-Type 4H SiC

Electrochemical Polishing of p-Type 4H SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

601

終了ページ:

604

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC Y. Ke, R.P. Devaty, W.J. Choyke Trans Tech Publications	7 国際会議録 New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC F. Yan, R.P. Devaty, W.J. Choyke, T. Kimoto, T. Ohshima Trans Tech Publications
2 国際会議録 CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., Saddow, S.E. Trans Tech Publications	8 国際会議録 Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC R.P. Devaty, F. Yan, W.J. Choyke, A. Gali, T. Kimoto Trans Tech Publications
3 国際会議録 Columnar Pore Growth in n-Type 6H SiC Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J. Trans Tech Publications	9 国際会議録 Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC W.J. Choyke, B. D'Urso, F. Yan, R.P. Devaty Trans Tech Publications
4 国際会議録 Porous Structure of Anodized p-Type 6H SiC Shishkin, Y., Ke, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications	10 国際会議録 Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C F. Yan, A. Espenlaub, R.P. Devaty, T. Ohshima, W.J. Choyke Trans Tech Publications
5 国際会議録 Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n-and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 … F. Yan, R.P. Devaty, W.J. Choyke, K. Danno, G. Alfieri Trans Tech Publications	11 国際会議録 Photoluminescence Study of C-H and C-D Centers in 4H SiC Bai, S., Yan, F., Devaty, R.P., Choyke, W.J., Grotzschel, R., Wagner, G., MacMillan, M.F. Trans Tech Publications
6 国際会議録 Triangular Pore Formation in Highly Doped n-Type 4H SiC Shishkin, Y., Choyke, W.J., Devaty, R.P. Trans Tech Publications	12 国際会議録 Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC Yan, F., Devaty, R.P., Choyke, W.J., Gali, A., Bhat, I.B., Larkin, D.J. Trans Tech Publications

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