On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC

On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

573

終了ページ:

576

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers A.V. Kuchuk, M. Guziewicz, R. Ratajczak, M. Wzorek, V.P. Kladko Trans Tech Publications	7 国際会議録 Titanium-Based Ohmic Contact on p-Type 4H-SiC Jung, K.H., Cho, N.I., Lee, J.H., Yang, S.J., Kim, C.K., Lee, B.-T., Rim, K.H., Kim, N.-K., Kim, E.-D. Trans Tech Publications
2 国際会議録 The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC A.V. Kuchuk, V.P. Kladko, K. Gołaszewska, M. Guziewicz, M. Wzorek Trans Tech Publications	8 国際会議録 Behavior of ZINC during formation of Au(Zn) ohmic contacts to p-type GaAs Kaminska, E., Piotrowska, A., Mizera, E., Zarecka, R., Adamczewska, J., Dynowska, E. MRS - Materials Research Society
3 国際会議録 Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS M. Wzorek, A. Czerwiński, J. Ratajczak, M.A. Borysiewicz, A.V. Kuchuk Trans Tech Publications	9 国際会議録 Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN Kaminska, E., Piotrowska, A., Golaszewska, K., Lukasiewicz, R., Szczesny, A., Kowalczyk, E., Jagodzinski, P., Guziewicz, … Materials Research Society
4 国際会議録 Ni/Si-Based Ohmic Contacts to p- and n-Type GaN Kaminska, E., Piotrowska, A., Barcz, A., Guziewicz, M., Kasjaniuk, S., Bremser, M. D., Davis, R. F., Dynowska, E., … MRS - Materials Research Society	10 国際会議録 Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC B. Krishnan, S.P. Kotamraju, G. Melnychuk, N. Merrett, Y. Koshka Trans Tech Publications
5 国際会議録 Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures Piotrowska, A., Kaminska, E., Barcz, A., Golaszewska, K., Wrzesinska, H., Piotrowski, T.T., Dynowska, E., Jakiela, R. Materials Research Society	11 国際会議録 A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation Kestle, A., Wilks, S. P., Dunstan, P. R., Pritchard, M., Pope, G., Koh, A., Mawby, P. A. Trans Tech Publications
6 国際会議録 Titanium-Based Ohmic Contact on p-Type 4H-SiC Jung, K.H., Cho, N.I., Lee, J.H., Yang, S.J., Kim, C.K., Lee, B.-T., Rim, K.H., Kim, N.-K., Kim, E.-D. Trans Tech Publications	12 国際会議録 Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC P. Fedeli, M. Puzzanghera, F. Moscatelli, R.A. Minamisawa, G. Alfieri, U. Grossner, R. Nipoti Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12