Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

477

終了ページ:

480

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki Trans Tech Publications	7 国際会議録 Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC T. Hatakeyama, H. Kono, T. Suzuki, J. Senzaki, K. Fukuda Trans Tech Publications
2 国際会議録 Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki Trans Tech Publications	8 国際会議録 Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, J. Senzaki, K. Fukuda, H. Matsuhata Trans Tech Publications
3 国際会議録 Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy H. Tsuchida, I. Kamata, M. Nagano Trans Tech Publications	9 国際会議録 Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer H. Tsuchida, M. Ito, I. Kamata, M. Nagano Trans Tech Publications
4 国際会議録 Three-Dimensional Imaging of Extended Defects in 4H-SiC R. Tanuma, M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	10 国際会議録 Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face T. Suzuki, H. Yamaguchi, T. Hatakeyama, H. Matsuhata, J. Senzaki Trans Tech Publications
5 国際会議録 Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process H. Tsuchida, I. Kamata, M. Nagano, L. Storasta, T. Miyanagi Trans Tech Publications	11 国際会議録 Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe Trans Tech Publications
6 国際会議録 Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications	12 国際会議録 Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications

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