Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS

Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

393

終了ページ:

396

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications	7 国際会議録 Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC T. Sledziewski, G. Ellrott, W. Rösch, H.B. Weber, M. Krieger Trans Tech Publications
2 国際会議録 Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications	8 国際会議録 Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC M. Obernhofer, M. Krieger, F. Schmid, H.B. Weber, G. Pensl, A. Schoerner Trans Tech Publications
3 国際会議録 Electrical Activation of B⁺-Ions Implanted into 4H-SiC T. Tsirimpis, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications	9 国際会議録 Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC J. Weber, S. Beljakowa, H.B. Weber, G. Pensl, B. Zippelius Trans Tech Publications
4 国際会議録 Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ? B. Zippelius, A. Glas, H.B. Weber, G. Pensl, T. Kimoto Trans Tech Publications	10 国際会議録 Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers S. Beljakowa, S.A. Reshanov, B. Zippelius, M. Krieger, G. Pensl Trans Tech Publications
5 国際会議録 On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC J. Weber, H.B. Weber, M. Krieger Trans Tech Publications	11 国際会議録 Ionization Energies of Phosphorus Donors in 6H-SiC F. Schmid, K. Semmelroth, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications
6 国際会議録 Iron-Related Defect Centers in 3C-SiC T. Tsirimpis, S. Beljakova, B. Zippelius, H.B. Weber, G. Pensl Trans Tech Publications	12 国際会議録 Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy M. Hauck, J. Weisse, J. Lehmeyer, G. Pobegen, H.B. Weber, M. Krieger Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12