The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC

The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

369

終了ページ:

372

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Influence of Growth Conditions on Irradiation Induced Defects in 4H-SiC I. Pintilie, K. Irmscher, U. Grossner, B.G. Svensson, B. Thomas Trans Tech Publications	7 国際会議録 Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters Pintilie, I., Pintilie, L., Irmscher, K., Thomas, B. Trans Tech Publications
2 国際会議録 Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique L.S. Lovlie, I. Pintilie, S. Kumar C-P., U. Grossner, B.G. Svensson Trans Tech Publications	8 国際会議録 Interaction between copper and irradiation-induced defects in crystalline silicon Svensson,B.G., Aboelfotoh,M.O. Trans Tech Publications
3 国際会議録 A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation L. Løvlie, L. Vines, B.G. Svensson Trans Tech Publications	9 国際会議録 Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC Alfieri, G., Monakhov, E.V., Svensson, B.G. Trans Tech Publications
4 国際会議録 Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation L.S. Løvlie, B.G. Svensson Trans Tech Publications	10 国際会議録 Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy Leveque, P., Martin, D., Svensson, B.G., Hallen, A. Trans Tech Publications
5 国際会議録 Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor Wagner, G., Irmscher, K. Trans Tech Publications	11 国際会議録 Implantation Temperature Dependent Deep Level Defects in 4H-SiC Aberg, D., Storasta, L., Hallen, A., Svensson, B.G. Trans Tech Publications
6 国際会議録 Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures L.D. Filip, I. Pintilie, B.G. Svensson Trans Tech Publications	12 国際会議録 Carrier Removal in Electron Irradiated 4H and 6H SiC M. Mikelsen, U. Grossner, J.H. Bleka, E.V. Monakhov, B.G. Svensson Trans Tech Publications

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