Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

295

終了ページ:

298

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

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2 国際会議録 Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan, D.M. Hansen Trans Tech Publications	8 国際会議録 Studies on Minority-Carrier Lifetime by Microwave Photoconductivity Decay Technique Gupta,A.K., Ray,U.C. SPIE - The International Society for Optical Engineering
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