Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

245

終了ページ:

250

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers G. Feng, J. Suda, T. Kimoto Trans Tech Publications	7 国際会議録 Temperature Dependence of Impact Ionization Coefficients in 4H-SiC H. Niwa, J. Suda, T. Kimoto Trans Tech Publications
2 国際会議録 In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate G. Feng, J. Suda, T. Kimoto Trans Tech Publications	8 国際会議録 Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation H. Miyake, T. Kimoto, J. Suda Trans Tech Publications
3 国際会議録 Non-Destructive Detection and Visualization of Extended Defects in 4H-SiC Epilayers Gan Feng, Jun Suda, Tsunenobu Kimoto Materials Research Society	9 国際会議録 Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process H. Miyake, T. Kimoto, J. Suda Trans Tech Publications
4 国際会議録 Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes H. Niwa, G. Feng, J. Suda, T. Kimoto Trans Tech Publications	10 国際会議録 Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure M. Noborio, J. Suda, T. Kimoto Trans Tech Publications
5 国際会議録 On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps B. Zippelius, J. Suda, T. Kimoto Trans Tech Publications	11 国際会議録 Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs Y. Nanen, J. Suda, T. Kimoto Trans Tech Publications
6 国際会議録 Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers T. Hayashi, K. Asano, J. Suda, T. Kimoto Trans Tech Publications	12 国際会議録 Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers J. Hennessy, T. Ryan Trans Tech Publications

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