P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 615-617
- 発行年:
- 2009
- 開始ページ:
- 177
- 終了ページ:
- 180
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
3
国際会議録
Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
国際会議録
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
12
国際会議録
Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
Trans Tech Publications |