P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 615-617
- 発行年:
- 2009
- 開始ページ:
- 165
- 終了ページ:
- 168
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering, Narosa |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |