Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

105

終了ページ:

108

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

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1 国際会議録 Basal Plane Dislocation Mitigation in 8° Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition B.L. Vanmil, R.E. Stahlbush, R.L. Myers-Ward, Y.N. Picard, S.A. Kitt Trans Tech Publications	7 国際会議録 Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing M.J. Tadjer, N.A. Mahadik, B.N. Feigelson, R.E. Stahlbush, E.A. Imhoff Trans Tech Publications
2 国際会議録 Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth R.E. Stahlbush, B.L. VanMil, K.X. Liu, K.K. Lew, R.L. Myers-Ward Trans Tech Publications	8 国際会議録 Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy R.E. Stahlbush, N.A. Mahadik, M.J. O'Loughlin Trans Tech Publications
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