Low-Temperature Homoepitaxial Growth with SiCI4 Precursor Compared to HCl Assisted SiH4-Based Growth

Low-Temperature Homoepitaxial Growth with SiCI₄ Precursor Compared to HCl Assisted SiH₄-Based Growth

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

97

終了ページ:

100

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC S.P. Kotamraju, B. Krishnan, G. Melnychuk, Y. Koshka Trans Tech Publications	7 国際会議録 Homoepitaxial Growth of 4H-SiC Using CH3CI Carbon Precursor Koshka, Y., Lin, H. D., Melnychuk, G., Mazzola, M. S., Wyatt, J. L. Trans Tech Publications
2 国際会議録 Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC G. Melnychuk, S.P. Kotamraju, Y. Koshka Trans Tech Publications	8 国際会議録 Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC K. Chindanon, H.D. Lin, G. Melnychuk, Y. Koshka Trans Tech Publications
3 国際会議録 Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC B. Krishnan, S.P. Kotamraju, G. Melnychuk, N. Merrett, Y. Koshka Trans Tech Publications	9 国際会議録 Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth H. Das, G. Melnychuk, Y. Koshka Trans Tech Publications
4 国際会議録 Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive Galyna Melnychuk, Huang De Lin, Siva Prasad Kotamraju, Yaroslav Koshka Materials Research Society	10 国際会議録 Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method H. Das, B. Krishnan, G. Melnychuk, Y. Koshka Trans Tech Publications
5 国際会議録 Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors S.P. Kotamraju, B. Krishnan, Y. Koshka Trans Tech Publications	11 国際会議録 Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor Yaroslav Koshka, Bharat Krishnan, Huang-De Lin, Galyna Melnychuk Materials Research Society
6 国際会議録 Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive H.D. Lin, G. Melnychuk, J.L. Wyatt, Y. Koshka Trans Tech Publications	12 国際会議録 Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor Koshka, Y., Lin, H.D., Melnychuk, G., Wood, C. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12