Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

1019

終了ページ:

1022

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 CM-Wave Modulator with High-Voltage 4H SiC pin Diodes Boltovets, M.S., Basanets, V.V., Zorenko, A.V., Krivutsa, V.A., Camara, N., Orechovskij, V.O., Simonchuk, V.I., … Trans Tech Publications	7 国際会議録 Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process P.A. Ivanov, M.E. Levinshtein, M.S. Boltovets, V.A. Krivutsa, J. Palmour, M. Das, B.A. Hull Trans Tech Publications
2 国際会議録 Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 oC Temperature Range Boltovets, M.S., Basanets, V.V., Camara, N., Krivutsa, V.A., Zekentes, K. Trans Tech Publications	8 国際会議録 High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes Levinshtein, M.E., Ivanov, P.A., Boltovets, M.S., Krivutsa, V.A., Palmour, J.W., Das, M.K., Hull, B.A. Trans Tech Publications
3 国際会議録 Microwave p-i-n Diodes and Switches Based on 4H-SiC K. Zekentes, N. Camara, L.P. Romanov, A.V. Kirillov, M.S. Boltovets Trans Tech Publications	9 国際会議録 Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide Buniatyan, V.V., Aroutiounian, V.M., Zekentes, K., Camara, N., Soukiassian, P. Trans Tech Publications
4 国際会議録 Investigation of Microwave Switching 4HSiC PiN Diodes in the 20-500℃ Temperature Range Boltovets, M. S., Basanets, V. V., Camara, N., Krivutsa, V. A., Zekentes, K. Trans Tech Publications	10 国際会議録 Current Transport Mechanisms in 4H-SiC PiN Diodes Camara, N., Bano, E., Zekentes, K. Trans Tech Publications
5 国際会議録 Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes Bludov, A.V., Boltovets, M.S., Vassilevski, K.V., Zorenko, A.V., Zekentes, K., Lebedev, A.A., Krivutsa, V.A. Trans Tech Publications	11 国際会議録 Planar Schottky Microwave Diodes on 4H-SiC Sudow, M., Rorsman, N., Nilsson, P. A., Zirath, H. Trans Tech Publications
6 国際会議録 Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum N. Camara, L.P. Romanov, A.V. Kirillov, M.S. Boltovets, A.A. Lebedev, V.V. Zelenin, M. Kayambaki, K. Zekentes Trans Tech Publications	12 国際会議録 Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching Camara, N., Thuaire, A., Bano, E., Zekentes, K. Trans Tech Publications

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