Correlation between Thermal Oxide Breakdown and Defects in n-Type 4<i>H</i>-SiC Epitaxial Wafers

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

775

終了ページ:

778

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability K. Matocha, Z. Stum, S. Arthur, G. Dunne, L. Stevanovic Trans Tech Publications	7 国際会議録 Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs Soloviev, S.I., Sandvik, P., Arthur, S.D., Matocha, K.S., Maximenko, S.I., Sudarshan, T.S. Trans Tech Publications
2 国際会議録 Correlation Between Oxide Breakdown and Defects in SiC Wafers Soloviev, S., Khlebnikov, I., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society	8 国際会議録 Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown S.I. Soloviev, P.M. Sandvik, A. Vertiatchikh, K. Dovidenko, H.Y. Cha Trans Tech Publications
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