Blank Cover Image

Interface and Carrier Transport Behaviour in Al/HfO2/SiO2/SiC Structure

著者名:
掲載資料名:
Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
シリーズ名:
Materials science forum
シリーズ巻号:
600-603
発行年:
2009
パート:
2
開始ページ:
759
終了ページ:
762
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance

M.H. Weng, S. Barker, R. Mahapatra, B.J.D. Furnival, N.G. Wright

Trans Tech Publications
7 国際会議録 Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface

J.P. Goss, P.R. Briddon, N.G. Wright, A.B. Horsfall

Trans Tech Publications
2 国際会議録 Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination

C.M. Spargo, B.J.D. Furnival, R.M. Mahapatra, J.P. Goss, N.G. Wright

Trans Tech Publications
8 国際会議録 Simulation Study of High-k Materials for SiC Trench MOSFETs

P. Tappin, R. Mahapatra, N.G. Wright, P. Bhatnagar, A. Horsfall

Trans Tech Publications
3 国際会議録 Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide

M.H. Weng, R. Mahapatra, N.G. Wright, A.B. Horsfall

Trans Tech Publications
9 国際会議録 Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

R.C. Stevens, K. Vasilevskiy, J.E. Lees, N.G. Wright, A.B. Horsfall

Trans Tech Publications
4 国際会議録 First Principles Derivation of Carrier Transport across Metal - SiC Barriers

Dimitriu, C.B., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O'Neill, A.G.

Trans Tech Publications
10 国際会議録 4.6 kV, 10.5 mOhm&×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson

Trans Tech Publications
5 国際会議録 Low Frequency Noise in 4H-SiC Lateral JFET Structures

H.K. Chan, R.C. Stevens, J.P. Goss, N.G. Wright, A.B. Horsfall

Trans Tech Publications
11 国際会議録 Influence of Intercalated Silicon on the Transport Properties of Graphene

J.P. Goss, P.R. Briddon, V.K. Nagareddy, N.G. Wright, A.B. Horsfall

Trans Tech Publications
6 国際会議録 Switching Losses in a SiC-Based DC-DC Multilevel Boost Converter

O. Mostaghimi, N.G. Wright, A.B. Horsfall

Trans Tech Publications
12 国際会議録 Applications-Based Design of SiC Technology

N.G. Wright, C.M. Johnson, A.B. Horsfall, C. Buttay, K. Vassilevski

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12