Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures

Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

679

終了ページ:

682

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces M. Noborio, J. Suda, T. Kimoto Trans Tech Publications	7 国際会議録 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face M. Noborio, J. Suda, T. Kimoto Trans Tech Publications
2 国際会議録 Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure Y. Nanen, H. Yoshioka, M. Noborio, J. Suda, T. Kimoto Trans Tech Publications	8 国際会議録 High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient Kanzaki, Y., Kinbara, H., Kosugi, H., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Improved Dielectric ind Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing Kimoto, T., Kawano, H., Noborio, M., Suda, J., Matsunami, H. Trans Tech Publications	9 国際会議録 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET) Kaido, J., Kimoto, T., Suda, J., Matsunami, H. Trans Tech Publications
4 国際会議録 Short-Channel Effects in 4H-SiC MOSFETs Noborio, M., Kanzaki, Y., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation H. Miyake, T. Kimoto, J. Suda Trans Tech Publications
5 国際会議録 Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure M. Noborio, J. Suda, T. Kimoto Trans Tech Publications	11 国際会議録 MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation Kimoto, T., Kanzaki, Y., Noborio, M., Kawano, H., Matsunami, H. Materials Research Society
6 国際会議録 Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs Noborio, M., Negoro, Y., Suda, J., Kimoto, T. Trans Tech Publications	12 国際会議録 Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process H. Miyake, T. Kimoto, J. Suda Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12