Blank Cover Image

TEM Observation of SiO2/4H-SiC Hetero Interface

著者名:
掲載資料名:
Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
シリーズ名:
Materials science forum
シリーズ巻号:
600-603
発行年:
2009
パート:
2
開始ページ:
671
終了ページ:
674
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

H. Matsuhata, H. Yamaguchi, I. Nagai, T. Ohno, R. Kosugi

Trans Tech Publications
7 国際会議録 Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope

M. Sasaki, K. Tamura, H. Yamaguchi, H. Matsuhata, K. Kojima

Trans Tech Publications
2 国際会議録 Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition

H. Yamaguchi, H. Matsuhata, I. Nagai

Trans Tech Publications
8 国際会議録 Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy

Fukuda, K., Suzuki, S., Senzaki, J., Kosugi, R., Tanaka, T., Arai, K.

Trans Tech Publications
3 国際会議録 Microscopic Examination of SiO2/4H-SiC Interfaces

T. Hatakeyama, H. Matsuhata, T. Suzuki, T. Shinohe, H. Okumura

Trans Tech Publications
9 国際会議録 Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face

T. Suzuki, H. Yamaguchi, T. Hatakeyama, H. Matsuhata, J. Senzaki

Trans Tech Publications
4 国際会議録 Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

H. Matsuhata, H. Yamaguchi, I. Nagai, T. Ohno, R. Kosugi

Trans Tech Publications
10 国際会議録 Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties

T. Hosoi, D. Nagai, M. Sometani, T. Shimura, M. Takei, H. Watanabe

Trans Tech Publications
5 国際会議録 Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography

H. Yamaguchi, H. Matsuhata

Trans Tech Publications
11 国際会議録 A formation of SiO2/4H-SiC interface by oxidizing deposited poly-Si and high-temperature hydrogen annealing

Fukuda, H., Sakamoto, K., Nagai, K., Sekigawa, T., Yoshida, S., Arai, K.

MRS-Materials Research Society
6 国際会議録 Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

T. Hatakeyama, T. Suzuki, J. Senzaki, K. Fukuda, H. Matsuhata

Trans Tech Publications
12 国際会議録 Effect of Post-Oxidation-Annealing in Hydrogen on SiO2/4H-SiC Interface

Suzuki, S., Fukuda, K., Okushi, H., Nagai, K., Sekigawa, T., Yoshida, S., Tanaka, T., Arai, K.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12