Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

529

終了ページ:

532

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS N. Habka, V. Souliere, J.M. Bluet, M. Soueidan, G. Ferro, Y. Monteil Trans Tech Publications	7 国際会議録 Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism Soueidan, M., Ferro, G., Stoemenos, J., Polychroniadis, E.K., Chaussende, D., Soares, F., Juillaguet, S., Camassel, J., … Trans Tech Publications
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4 国際会議録 Growth Kinetics of 3C-SiC on α-SiC by VLS M. Soueidan, O. Kim-Hak, G. Ferro, N. Habka, B. Nsouli Trans Tech Publications	10 国際会議録 Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts Ferro, G., Soueidan, M., Jacquier, C., Godignon, P., Stauden, T., Pezoldt, J., Lazar, M., Montserrat, J., Monteil, Y. Trans Tech Publications
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