Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers

Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

477

終了ページ:

480

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers T. Miyazawa, M. Ito, H. Tsuchida Trans Tech Publications	7 国際会議録 Growth of 4H-SiC Epilayers and Z_1/2 Center Elimination T. Miyazawa, H. Tsuchida Trans Tech Publications
2 国際会議録 Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications	8 国際会議録 Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction H. Tsuchida, I. Kamata, M. Ito, T. Miyazawa, H. Uehigashi Trans Tech Publications
3 国際会議録 Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC Storasta, L., Kamata, I., Nakamura, T., Tsuchida, H. Trans Tech Publications	9 国際会議録 Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process H. Tsuchida, I. Kamata, M. Nagano, L. Storasta, T. Miyanagi Trans Tech Publications
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5 国際会議録 Recombination Enhanced Defect Annealing in 4H-SiC Storasta, L., Carlsson, F. H. C., Bergman, J. P., Janzen, E. Trans Tech Publications	11 国際会議録 Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications
6 国際会議録 V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications	12 国際会議録 Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity M. Ito, L. Storasta, H. Tsuchida Trans Tech Publications

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