Ionization Energies of Phosphorus Donors in 6H-SiC

Ionization Energies of Phosphorus Donors in 6H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

441

終了ページ:

444

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method Semmelroth, K., Schmid, F., Karg, D., Pensl, G., Maier, M., Greulich-Weber, S., Spaeth, J.-M. Trans Tech Publications	7 国際会議録 (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory G. Pensl, F. Schmid, S.A. Reshanov, H.B. Weber, M. Bockstedte, A. Mattausch, O. Pankratov, T. Ohshima, H. Itoh Trans Tech Publications
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