Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

著者名:: J.W. Steeds
掲載資料名:: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
シリーズ名:: Materials science forum
シリーズ巻号:: 600-603
発行年:: 2009
パート:: 1
開始ページ:: 437
終了ページ:: 440
総ページ数:: 4
出版情報:: Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:: 02555476
言語:: 英語
請求記号:: M23650
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC J.W. Steeds Trans Tech Publications	7 国際会議録 A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications
2 国際会議録 Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC J.W. Steeds Trans Tech Publications	8 国際会議録 Low Temperature Annealing of Optical Centres in 4H SiC Steeds, J.W., Furkert, S., Hayes, J.M., Sullivan, W. Trans Tech Publications
3 国際会議録 Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy Steeds, J.W., Evans, G.A., Furkert, S., Ley, L., Hundhausen, M., Schulz, N., Pensl, G. Trans Tech Publications	9 国際会議録 Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing J.W. Steeds Trans Tech Publications
4 国際会議録 Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations J.W. Steeds, N. Peng, W. Sullivan Trans Tech Publications	10 国際会議録 Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics J.W. Steeds Trans Tech Publications
5 国際会議録 The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation J.W. Steeds Trans Tech Publications	11 国際会議録 Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC Steeds, J.W., Furkert, S., Hayes, J.M., Sullivan, W. Trans Tech Publications
6 国際会議録 Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature … Steeds, J.W., Carosella, F., Evans, A.G., Ismail, M.M., Danks, L. R., Voegeli, W. Trans Tech Publications	12 国際会議録 Investigation of the Displacement Threshold of Si in 4H SiC Sullivan, W., Steeds, J.W. Trans Tech Publications

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