The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC

The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

397

終了ページ:

400

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques Thuaire, A., Henry, A., Magnusson, B., Bergman, J.P., Chen, W.M., Janzen, E., Mermoux, M., Bano, E. Trans Tech Publications	7 国際会議録 Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates N.T. Son, P. Carlsson, A. Gällström, B. Magnusson, E. Janzén Trans Tech Publications
2 国際会議録 Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC A. Gällström, B. Magnusson, E. Janzén Trans Tech Publications	8 国際会議録 The Silicon Vacancy in SiC E. Janzén, A. Gali, P. Carlsson, A. Gällström, B. Magnusson Trans Tech Publications
3 国際会議録 Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC A. Gällström, B. Magnusson, F.C. Beyer, A. Gali, N.T. Son Trans Tech Publications	9 国際会議録 Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material S. Hahn, F.C. Beyer, A. Gällström, P. Carlsson, A. Henry Trans Tech Publications
4 国際会議録 Electronic Structure of the UD3 Defect in 4H- and 6H-SiC Wagner, Mt., Magnusson, B., Chen, W.M., Janzen, E. Trans Tech Publications	10 国際会議録 Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory A. Csóré, A. Gällström, E. Janzén, A. Gali Trans Tech Publications
5 国際会議録 Electronic Structure of the UD3 Defect in 4H- and 6H-SiC Wagner, Mt., Magnusson, B., Chen, W.M., Janzen, E. Trans Tech Publications	11 国際会議録 Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy A. Gällström, I.G. Ivanov, R. Coble, R.P. Devaty, W.J. Choyke Trans Tech Publications
6 国際会議録 Intrinsic Defects in HPSI 6H-SiC: An EPR Study P. Carlsson, N.T. Son, B. Magnusson, A. Henry, E. Janzén Trans Tech Publications	12 国際会議録 Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC A. Gallstrorm, B. Magnusson, P. Carlsson, N.T. Son, A. Henry, F. Beyer, M. Syvajarvi, R. Yakimova, E. Janzen Trans Tech Publications

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