Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

389

終了ページ:

392

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Thermal Evolution of Defects in Semi-Insulating 4H SiC Carlos, W.E., Glaser, E.R., Garces, N.Y., Shanabrook, B.V., Fanton, M.A. Trans Tech Publications	7 国際会議録 Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC Carlos, W.E., Glaser, E.R., Shanabrook, B.V. Trans Tech Publications
2 国際会議録 Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing S.I. Maximenko, J.A. Freitas Jr., N.Y. Garces, E.R. Glaser, M.A. Fanton Trans Tech Publications	8 国際会議録 Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates Glaser, E.R., Shanabrook, B.V., Carlos, W.E., Chung, H.J., Nigam, S., Polyakov, A.Y., Skowronski, M. Trans Tech Publications
3 国際会議録 Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC A. Gallstrorm, B. Magnusson, P. Carlsson, N.T. Son, A. Henry, F. Beyer, M. Syvajarvi, R. Yakimova, E. Janzen Trans Tech Publications	9 国際会議録 Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition Huh, S.W., Polyakov, A.Y., Chung, H.J., Nigam, S., Skowronski, M., Glaser, E.R., Carlos, W.E., Fanton, M.A., Smirnov, … Trans Tech Publications
4 国際会議録 Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3 E.R. Glaser, N.Y. Garces, J.D. Caldwell, W.E. Carlos, M.E. Zvanut Trans Tech Publications	10 国際会議録 Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition Chung, H.J., Huh, S.W., Polyakov, A.Y., Nigam, S., Li, Q., Grim, J., Skowronski, M., Glaser, E.R., Carlos, W.E., … Trans Tech Publications
5 国際会議録 Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes Garces, N.Y., Carlos, W.E., Glaser, E.R., Huh, S.W., Chung, H.J., Nigam, S., Polyakov, A.Y., Skowronski, M. Trans Tech Publications	11 国際会議録 The Effect of Annealing on High-Resistivity and Semi-Insulating 4H-SiC Smith, S.R., Evwaraye, A.O., Mitchel, W.C. Materials Research Society
6 国際会議録 Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC W. C. Mitchel, W. D. Mitchell, H. E. Smith, W. E. Carlos, E. R. Glaser Materials Research Society	12 国際会議録 Defects in High-Purity Semi-Insulating SiC Son, N.T., Magnusson, B., Zolnai, Z., Ellison, A., Janzen, E. Trans Tech Publications

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